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This chapter provides a brief overview of solid-state diffusion of dopants in GaN, specifically Mg for p-type doping. We present calculations on fast diffusion mechanisms through gallium vacancies, how to induce these vacancies through Fermi level control of the GaN, and potential methods for suppressing the formation of compensating defects.

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Solid State Diffusion in GaN

  • 章节

  • 发表日期：

    2025年

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  • Noah Allen,
  • Kyoung Kweon,
  • Clint Frye,
  • Joel Varley,
  • Lars Voss

摘要

This chapter provides a brief overview of solid-state diffusion of dopants in GaN, specifically Mg for p-type doping. We present calculations on fast diffusion mechanisms through gallium vacancies, how to induce these vacancies through Fermi level control of the GaN, and potential methods for suppressing the formation of compensating defects.