The next generation of wide bandgap semiconductor devices can benefit from deep junctions (~> 6 μm) that require energies beyond the capabilities of conventional ion implanters. Using high-voltage electrostatic accelerators, ions can be implanted in SiC to a depth >15 μm. By changing the ion beam energy in discrete steps, the overlapping implantations can build a uniform implantation profile from the maximum implantation depth to the surface. To implant ions near the surface of the SiC wafer requires the use of an energy absorber to degrade the ion energy from 10s of MeV to a few keV. Brookhaven National Laboratory (BNL) has built a system to demonstrate the feasibility of this approach. The BNL system is described, and the results of high-energy implantation for high-voltage SiC devices are presented. Future improvements to the system are also discussed, along with a possible commercially viable implanter with high wafer throughput.