This chapter describes a novel fracture-based layer transfer method called controlled spalling that permits surface layer removal from nearly any brittle substrate. The most compelling aspect of this layer transfer technique lies in its extreme simplicity and the required equipment, which can be found in most common laboratories. Although the method is general and has been successfully applied to a wide range of materials and devices, this chapter will focus on controlled spalling of gallium nitride. The unique challenges associated with a fracture-based layer transfer method on the relatively hard GaN material system will be presented, as well as the greater challenge of thin film handling and mounting after successful layer transfer. The goal of this work is to provide the reader with a detailed understanding of how controlled spalling works, some of the tricks used for improving layer transfer yield and quality using spalling, and a critical assessment of its applicability to bulk GaN layer transfer.