The silicon carbide (SiC) industry is successfully leveraging the fully depreciated legacy silicon fab infrastructure and is making the relatively small financial investments that allow SiC fabrication in mature silicon fabs. Numerous well-established silicon fabrication processes have been successfully transferred to SiC. However, SiC material properties necessitate the development of specific processes not available from silicon. SiC is inert against chemical solvents and only dry etching is practical. Conventional thermal diffusion is not realistic in doping SiC due to its high melting point and the low diffusion constant of dopants within SiC; heated ion implantation must be performed, followed by a 1600–1800 °C anneal for SiC recrystallization and implant activation. The high value of the SiC/metal barrier results in rectifying metal contacts. Post-metal-deposition anneal is required for Ohmic contact formation. To achieve high-voltage performance close to the SiC theoretical limit, specialized edge-termination structures like multiple-junction termination extensions and floating guard rings have been successfully implemented. In this chapter, key aspects of SiC fabrication technology will be summarized with an emphasis on processes specific to SiC.