The improvements in semiconductor materials over the past several years have led to improvements in power semiconductor devices for pulsed power and power electronics applications. Two materials that have made significant progress are silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN are wide bandgap materials, with SiC having a bandgap of 3.3 eV (4H-SiC polytype) and GaN having a bandgap of 3.4 eV. The wide bandgap material can significantly improve device capabilities by enabling higher blocking voltage and higher operating temperature. SiC power device can block over ten times greater voltage than its silicon (Si) counterpart for the same drift region thickness which leads to the development of high-voltage, low on-state resistance unipolar devices with high current density and high switching frequency operational capability. This is a great advantage for pulsed power applications, as a single SiC device can block voltages over 15 kV while conducting significant current. Because of the high voltage and high current requirement for pulsed power applications, traditional switches like spark gaps, thyratrons, ignitrons, etc. have been used in the past. Currently, silicon-based thyristor and insulated-gate bipolar transistor (IGBT) are the workhorses of modern-day pulsed power technology working alongside traditional switches; however, with the improved performance of wide bandgap semiconductors such as SiC and GaN, an interest in wide bandgap solid-state devices for pulsed power applications is emerging.