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New opportunities for higher efficiency power electronics have emerged with the development of wide-bandgap power semiconductor devices, driven by the fundamental differences in material properties between silicon (Si) and the wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) [1]. Achieving high-efficiency power conversion in a reduced form factor requires low-loss power semiconductor switches. Today’s incumbent power switches, typically metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and thyristors, are Si based and are quickly approaching their limits due to the fundamental material properties of Si [2].

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Introduction

  • 章节

  • 发表日期：

    2025年

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  • Isik C. Kizilyalli,
  • Z. John Shen,
  • Thomas M. Jahns,
  • Daniel W. Cunningham

摘要

New opportunities for higher efficiency power electronics have emerged with the development of wide-bandgap power semiconductor devices, driven by the fundamental differences in material properties between silicon (Si) and the wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) [1]. Achieving high-efficiency power conversion in a reduced form factor requires low-loss power semiconductor switches. Today’s incumbent power switches, typically metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and thyristors, are Si based and are quickly approaching their limits due to the fundamental material properties of Si [2].