In Silico Quantum Simulation on the MnTiO3, FeTiO3, and NiTiO3 Materials in Ilmenite Structure as Candidates to Spintronic Devices
摘要
The development of spintronic devices through the years made significant progress from quantum mechanics. Since improvement on the digital signal to quantic computation, the research on the spin control has promoted advances on the search by materials for such aim. Then, magnetic semiconductors oxides are candidates to build spintronic devices, mainly in antiferromagnetic state. The big promise attributed on the spintronic devices is the quantum processor because instead of using 1 and 0 to describe bytes, the introduction of the spin alpha and beta states creates more combination for the information processing. The evaluation of the MnTiO3, FeTiO3, and NiTiO3 materials in Ilmenite structure investigated through DFT/B3LYP approach to discuss the magnetic ordering as candidate to make spintronic devices.