Group–VB Transition-Metal Dioxide and Dichalcogenide Monolayers
摘要
The group–VB elements V, Nb, and Ta and the chalcogen elements O, S, Se, and Te are involved in the group VB–VIA monolayers discussed in this chapter. Most transition-metal dioxide (TMDO) and transition-metal dichalcogenide (TMDC) monolayers are nonmagnetic in their pristine form. This is different for group–VB dichalcogenide materials, which exhibit ferromagnetic properties. They possess interesting intrinsic features, such as a d electron, which is responsible for the specific chemical behavior and metallic character (d1 group). Short- and long-range Coulomb interactions (electron-electron correlations) and sizable electron-phonon interactions give rise to collective ordering effects such as charge density waves (CDWs), Mott insulating phasesMott insulating phase, and superconductive phases. Charge density waves consist of a periodically distorted atomic lattice, and the charge density acquires a broken-symmetry state. The 2D-CDW phases have attracted particular attention as powerful resources for novel quantum phenomena. The competition of charge, spin, Mott insulating, and superconducting states produces a rich phase diagram of V-based, Nb-based, and Ta-based dichalcogenides. In particular, CDWs, which consist of spontaneous reorganization of electrons into periodic charge modulations, have attracted increasing amounts of attention as a new tool for realizing nanosheetsNanosheet for quantum-based applications. While the term CDW is widely used, the expression ‘periodic lattice distortion’ (PLD) describes the observed lattice conversion much better. A related hot topic is the investigation of magnetic 2D materials. Due to the rapid development of synthesisSynthesis strategies for high-quality monolayers, the discovery of interesting novel structures is progressing quite fast. Since techniques for accurately measuring the magnetism of monolayers are still lacking, our knowledge of their magnetic properties is still in its infancy. Except for TaTe2, molecular beam epitaxyEpitaxy (MBE) allowed the growth of the compound monolayers on various substrates.