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This study confers the Comparison of 12 HEMTs (High electron mobility transistors) alone and the twelve different low noise amplifiers designed with 12 HEMTs transistors and performance compared concerning S parameters, stability, and Noise figure (NF) at 11 GHz. From the comparison analysis and simulation results, it shows that NECs NE32400 is the appropriate one to design the Low Noise Amplifier (LNA) at 11 GHz with better noise figure. Finally, the single-stage LNA is designed with the selected HEMT and obtained better gain, noise figure, output power, S parameters, and stability factor results. The LNA achieves 13.97 dB gain (S21) with noise figure (NF) of 0.913 dB, input reflection coefficient (S11) is − 6.825, and Output reflection (S22) of − 11.692 dB.

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Low Noise Amplifier Design for X Band Application Using GaAs pHEMT

  • 会议论文

  • 发表日期：

    2025年

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  • K. Sowjanya,
  • Paramesha

摘要

This study confers the Comparison of 12 HEMTs (High electron mobility transistors) alone and the twelve different low noise amplifiers designed with 12 HEMTs transistors and performance compared concerning S parameters, stability, and Noise figure (NF) at 11 GHz. From the comparison analysis and simulation results, it shows that NECs NE32400 is the appropriate one to design the Low Noise Amplifier (LNA) at 11 GHz with better noise figure. Finally, the single-stage LNA is designed with the selected HEMT and obtained better gain, noise figure, output power, S parameters, and stability factor results. The LNA achieves 13.97 dB gain (S21) with noise figure (NF) of 0.913 dB, input reflection coefficient (S11) is − 6.825, and Output reflection (S22) of − 11.692 dB.