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A new engineering technique employing a double π-gate configuration has been introduced to mitigate the significant gate leakage current often encountered in conventional AlGaN/GaN high electron mobility transistors (HEMTs). The substantial gate leakage current poses considerable challenges to device performance and reliability in conventional HEMTs. Through the proposed approach, a remarkable enhancement of up to 8–9 times in reducing gate leakage current has been achieved, marking a substantial advancement in HEMT technology. Furthermore, the proposed model exhibits a notable positive threshold voltage shift of 0.6 V, indicating improved operational characteristics. Additionally, the electron quasi-Fermi level (QFL) and hole quasi-Fermi levels have been precisely determined, being positioned at − 30 meV below the conduction band (CB) and 28 meV above the valence band (VB) respectively. To comprehensively assess the impact of these advancements, small signal S-parameters have been meticulously measured. These measurements provide invaluable insights into the rearrangement of input and output capacitance effects, further elucidating the transformative effects of the proposed technique on device performance and functionality.

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Enhancement of Gate Leakage Current Reduction of Double π-Gate Model to Reduce the Trapping Effects in Al 0.3 Ga 0.7 N/GaN MOSHEMTs

  • 会议论文

  • 发表日期：

    2025年

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  • R. Venkateswarlu,
  • Bibhudendra Acharya,
  • Guru Prasad Mishra

摘要

A new engineering technique employing a double π-gate configuration has been introduced to mitigate the significant gate leakage current often encountered in conventional AlGaN/GaN high electron mobility transistors (HEMTs). The substantial gate leakage current poses considerable challenges to device performance and reliability in conventional HEMTs. Through the proposed approach, a remarkable enhancement of up to 8–9 times in reducing gate leakage current has been achieved, marking a substantial advancement in HEMT technology. Furthermore, the proposed model exhibits a notable positive threshold voltage shift of 0.6 V, indicating improved operational characteristics. Additionally, the electron quasi-Fermi level (QFL) and hole quasi-Fermi levels have been precisely determined, being positioned at − 30 meV below the conduction band (CB) and 28 meV above the valence band (VB) respectively. To comprehensively assess the impact of these advancements, small signal S-parameters have been meticulously measured. These measurements provide invaluable insights into the rearrangement of input and output capacitance effects, further elucidating the transformative effects of the proposed technique on device performance and functionality.