Optimization of ECDM Performances for Micro-machining of Semi-conducting Silicon-Wafer
摘要
Silicon-wafer is a semi-conducting material which tries to take part in micro-machining industrial field. In this chapter, affects of input parameters like Duty factor/ duty ratio (DR%), IEG, pulse-on-time (PT), voltage and mixed electrolyte wt% at equal distribution of ratio on TWR, HAZ & Roughness of silicon-wafer has been elaborated for micro-ECDM operation of silicon-wafer by WC micro-tool. The chapter contains ANOVA based fitness analysis with model formation as well as validation and also this paper analyzed multi-objective minimization of SR, TWR & HAZ by RSM as desirable function analysis. The SEM of Si-wafer channel shows the thermal effects and micro-texture of un-cut silicon-wafer grains. In this experimentation for minimization of responses, parameters are found 50.70 V, 48.23 μs, 40 mm IEG & 49% duty ratio with 30 wt% of NaOH & KOH at equal proportion.