The use of circuit modeling and simulation has long been established as a fundamental approach in studying physical phenomena, particularly in the field of electronics for understanding the behavior of MOS transistors. Likewise, in the investigation of electronic components’ susceptibility to radiation effects, numerous models have been developed and documented in the literature to analyze the diverse interaction mechanisms at both the device and circuit levels. This chapter provides an introduction to circuit modeling and simulation techniques specifically tailored for studying single-event effects (SEEs). The aim is to elucidate the underlying principles and methodologies employed in simulating the impact of radiation on electronic circuits. Furthermore, we will outline the multi-scale and multi-physics prediction workflow that will be employed throughout the remainder of this book.