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Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.

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Out-of-SOA Performance of 3.3 kV SiC MOSFETs: Comparison Between Planar and Quasi-Planar Trench

  • 会议论文

  • 发表日期：

    2025年

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  • C. Scognamillo,
  • A. Borghese,
  • K. Melnyk,
  • I. Nistor,
  • V. d’Alessandro,
  • M. Boccarossa,
  • V. Terracciano,
  • M. Riccio,
  • A. P. Catalano,
  • G. Breglio,
  • N. Lophitis,
  • M. Antoniou,
  • M. Rahimo,
  • A. Irace,
  • L. Maresca

摘要

Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.