A Wideband L-band Integrated Low Noise Amplifier
摘要
Collecting accurate Earth surface data is crucial for climatology and weather modelling, especially in cold regions. However, recent missions have revealed Radio Frequency Interference (RFI) challenges within the protected L-Band, necessitating robust payloads capable of operating amidst strong RFIs. This study proposes an L-band packaged low-noise amplifier (LNA) designed to maintain performance across the 0.4 GHz−2 GHz band, using a GaN-on-SiC HEMT process. The LNA design employs a cascode architecture and achieves a small-signal gain of 20.7 ± 0.18 dB with a worst-case noise figure of 0.9 dB. To enhance survivability, an integrated limiter is added ahead of the LNA, forming a compact chain with promising performance for radiometric measurements in challenging RF environments. Chip size is 3 × 2 mm2.