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Advanced integrated interconnect solutions are proposed in this paper targeting Low-noise amplifiers (LNA) operating at 100 GHz and above. A demonstrator GaAs LNA assembled on PCB is designed and tested showing more than 20 dB gain and typically 5–6 dB Noise Figure in 92–114 GHz, accounting also for the losses of the vertical RF interconnects (hot vias). The RF vertical interconnect design challenges are described.

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Advanced Interconnect Solutions for Millimetre-Wave Low-Noise Amplifiers

  • 会议论文

  • 发表日期：

    2025年

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  • Patrick Ettore Longhi,
  • Walter Ciccognani,
  • Sergio Colangeli,
  • Peiman Parand,
  • Antonio Serino,
  • Ernesto Limiti

摘要

Advanced integrated interconnect solutions are proposed in this paper targeting Low-noise amplifiers (LNA) operating at 100 GHz and above. A demonstrator GaAs LNA assembled on PCB is designed and tested showing more than 20 dB gain and typically 5–6 dB Noise Figure in 92–114 GHz, accounting also for the losses of the vertical RF interconnects (hot vias). The RF vertical interconnect design challenges are described.