Investigation of Channel Doping Effects on High-Frequency Noise for Trench Double Gate JLFETs

In this paper first time the impacts of channel/drain doping on the high-frequency noise parameters are studied along with the analog device performances for trench double gate junctionless FETs. It is revealed that a higher channel doping of about 8 × 1018 cm−3 contributes to appreciable noise performance and an improvement in drain current, transconductance are also observed. Although doping concentration at the drain side is less significant for the betterment of drain current or transconductance, but it is one of the key performers in the reduction of noise and a large value of drain doping can degrade the noise parameters a lot.