Effect of Sn Doping on ZnO Thin Film-Based Planar Schottky Diode for Optoelectronic Application

In this experimental work, we report the synthesis of doped and undoped ZnO via the sol–gel method. From the obtained precursor solutions, the thin film on silica substrates was deposited by using the low-cost doctor blade method. In this work, Sn metal with different percentages of doping, i.e., 2 and 4% in ZnO, were prepared and compared. The implication of Sn doping into ZnO was systematically analyzed using XRD, FESEM, and UV-vis-spectroscopy, respectively. The planar Schottky diode structure was fabricated by depositing silver and aluminum contact on undoped and doped film. Later the electrical characteristics of the device were examined by using a semiconductor parameter analyzer. The device showed a good response to UV light. The above findings for Sn-doped ZnO thin films shed new promising applications in optoelectronic devices.