Thermal Rectifier Nature of InGaN/GaN Heterostructure

This work examined the asymmetric thermal transport behavior across the interface between InGaN and GaN layers in order to better understand the thermal rectification capabilities of InGaN/GaN heterostructures. For different compositions of indium, we calculated the phonon transmission coefficient ( \(\Gamma\) ) for InGaN/GaN contacts. When it comes to the material's customized thermal boundary resistance (TBR) and thermal conductivity (k), which are crucial for heat conduction through the material, Γ is a critical parameter. The theoretical value of Γ is observed to be smaller in the direction of the GaN to InGaN layer than in the opposite direction, where Γ declines in InGaN/GaN SLs as an indication of Indium composition. This type of interface displays the thermal rectifier indicator, which can be used in a variety of electronic and photonic devices for thermal isolation and heat control.