Electrical Properties of the p-CuNiO2/n-Si Heterojunction Produced by Radio Frequency Magnetron Sputtering
摘要
The conditions for the fabrication of anisotype heterostructures p-CuNiO2/n-Si by the method of radio frequency magnetron sputtering of CuNiO2 thin films on n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyzed based on temperature dependences of I-V characteristics. The influence of light on the electrical properties of the p-CuNiO2/n-Si heterostructure is determined.