Advancements and Challenges in Extending Emission Range: Exploring InAs/InP as a Promising Alternative to InAs/GaAs Quantum Dots

InAs/GaAs QDs is 1.3 µm many efforts have been made to extend their operation to approximately 1.55 µm. However, these attempts have been hindered by the significant compressive strain experienced by the InAs/GaAs system, limiting the formation of high-quality quantum dots emitting beyond 1.3 µm. Consequently, attention has shifted towards the InAs/InP QDs system, although experimental studies on this system remain relatively scarce compared to InAs/GaAs QDs. This paper explores the potential of InAs/InP QDs to emit at 1.55 µm. Utilizing the Effective Mass Approximation and Hyperbolic Band models, it has been demonstrated that these QDs can indeed achieve emission wavelengths of 1.55 µm at room temperature. Tuning the emission wavelength of InAs/InP QDs with greater precision can be achieved by varying the size of the QDs, leveraging the quantum confinement effect. However, achieving this requires careful control of growth conditions to prevent additional InAs deposition due to As/P exchange, as the emission wavelength strongly depends on the thickness of deposited InAs layers.