Investigating Emission Wavelength Control in InAs Quantum Dots for 1.55 μm Telecommunications Applications

Mastering the emission wavelength of quantum dots (QDs) presents a significant challenge, particularly as demand escalates for high-quality semiconductor material operating at 1.55 μm. Despite extensive efforts to extend the emission wavelength of InAs/GaAs QDs beyond their longest wavelength emission of 1.3 μm, the substantial compressive strain remains a major hindrance. Consequently, researchers have turned to the InAs/InP QDs system, although experimental investigations in this realm are relatively scarce compared to InAs/GaAs QDs. This study delves into the potential of InAs/InP QDs to emit at 1.55 μm. Utilizing the Hyperbolic Band models, it has been demonstrated that these QDs can achieve emission wavelengths of 1.55 μm at room temperature. Fine-tuning the emission wavelength to approximately 1.55 μm, with enhanced precision, can be accomplished by manipulating the size of the QDs, exploiting the quantum confinement effect. Given the significant influence of InAs layer thickness on emission wavelength, meticulous control of growth conditions is imperative to prevent excessive InAs addition through As/P exchange.