Analysis, Synthesis and State Optimization Methods for Operation Dynamics of Contacts Facilitating AI Application in Machine Engineering

Electronic contact probes are widely used in high-tech and research-intensive machine engineering including process systems and flow production lines using artificial intelligence (AI). Improving the reliability and efficiency of production processes, equipment utilization, links, providing safe working conditions, and complying with labor regulations in the smart machine industry largely depends on the quality and reliability of electronic smart system probes. This paper suggests improving the stability of smart machine engineering probe operation through the reliability of aluminum alloys and the aluminum-silicon (Al-Si) system by synthesizing contacts with ion bombardment and controlling and analyzing their volt-ampere characteristic. Thus, while measuring the volt-ampere characteristics (I-V) of the probe before and after the introduction of argon ions (Ar+), the authors analyzed and synthesized the ion-bombardment modes of AI contacts on electronics silicon, i.e. the n-type of Si. The authors used the procedure to study the parameters of these structures through saturation current, perfection factor, and diode base resistivity values. The statistical analysis of the contact time-to-failure test using the α particle channel zone method showed that the Si contact deteriorate more due to the synthesis of interface structure by the introduction of argon ions. The cause of the observed probe parameter change (the argon ion exposure dose) due to the contact synthesis led to the emergence of a series resistance of the smart probe. The state optimization of the probe contact operation dynamic improved the stability of data transfer for AI processing, adjustment, and control during the production of various assembly units.