Effects of Scaling on MOS IC Design and Consequences for the Roadmap
摘要
The prolonged scaling of CMOS devices according to Moore’s law has brought the design complexity in terms of number of transistors and performance requirements to such a high level that design styles and methods continuously need to be changed in order to manage this complexity and to enable full exploitation of the potentials of advanced and future CMOS technologies. A prediction of these potentials was presented in the International Technology Roadmap for Semiconductors (ITRS) (Semiconductors Industrial Associations, ITRS roadmap, 2013 update, http://www.itrs.net ), launched in 1991 by the Semiconductor Industrial Association (SIA). Traditionally, this ITRS roadmap was updated every 2 years. Because the semiconductor industry is rapidly approaching a brick wall, leaving only a few players who can afford the huge investments needed for further scaling, the continuation of the ITRS roadmap has become questionable. The ITRS 2013 roadmap is probably the last version.