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Conclusion

  • Maurizio Di Paolo Emilio

摘要

This chapter underscores the transformative potential of silicon carbide (SiC) in power electronics. The author highlights disruptive substrate innovations by Soitec and KISAB, promising to revolutionize SiC manufacturing. Advancements in MOSFET designs from companies such as ROHM and Infineon, alongside the industry’s transition to larger substrates, signal significant progress. Insights reflect the evolving landscape of semiconductor technology, poised to impact diverse sectors such as electric vehicles and renewable energy systems.