SiC Technology
摘要
This chapter of this book presents an in-depth exploration of silicon carbide (SiC) technology, authored by a distinguished panel of experts from leading companies and academic institutions. Rudolf Elpelt and Andrea Piccioni from Infineon Technologies delve into design intricacies, material selection, and SiC metal-oxide-semiconductor field-effect transistor (MOSFET) switching cycles. Engineers from onsemi, Nexperia, Keysight Technologies, Navitas, and PowerAmerica/NC State University further elaborate on reliability challenges, packaging innovations, and device dynamics. This collaborative effort underscores SiC’s transformative impact on power electronics, emphasizing thermal management, reliability enhancement, and efficiency improvements.