SiC Material Properties

This chapter of this publication presents an in-depth analysis of silicon carbide (SiC) semiconductor material properties authored by leading experts in the field. Dr. Kevin Speer, Dr. Yogesh Sharma, and Dr. Sergey Maximenko from Microchip Technology provide insights into SiC’s crystal structure and electronic characteristics, emphasizing its wide bandgap, breakdown electric fields, carrier mobilities, and thermal properties. Filippo Di Giovanni, a retired strategic marketing manager at STMicroelectronics, discusses substrates and epitaxial growth techniques crucial for SiC semiconductor fabrication. Finally, Ravi Bollina, Dr. William Gemmill, Terry Knight, Dr. Christian Jentgens, and Dipl. Ing. Helge Willers from Pureon explore the preparation of SiC wafer substrates, highlighting their significance for high-power and high-frequency applications.