Integrated GeSn Heterojunction Phototransistor on Si
摘要
This work investigates on the behavior of p-n-p GeSn heterojunction phototransistors integrated on Si substrates. We found that the GeSn heterojunction phototransistor performs significantly better in inverse operation mode than in normal operation mode. The investigations show that wavelengths up to 2000 nm can be detected with the GeSn heterojunction phototransistor. At the wavelength of 1550 nm, an emitter-collector-voltage of −1 V, and an optical power of 0.1 W, an optical responsivity of 2 A/W was measured. Compared to the Ge reference phototransistor, this is an increase by a factor of 50.