External Net Gain in Monolithically Integrated Si3N4-Al2O3:Er3+ Spiral Waveguide Amplifiers
摘要
External net gain is demonstrated in the C-band using reactively sputtered Al2O3:Er3+ spiral waveguide amplifiers monolithically integrated with Si3N4. On-chip powers up to 50 mW are measured, with >30 dB internal gain at 1532 nm and external gain of ~5 dB from 1530–1560 nm for a 20 cm waveguide with an erbium concentration of 1.5 ions/cm3.