Electro-Optic Modulator in Thin-Film Lithium Niobate Foundry Process
摘要
The Characterization of thin-film lithium niobate modulators with electro-optical bandwidth higher than 50 GHz is presented. The devices, operating in the telecom C-band, are manufactured in a standard foundry process following design rules. The 7.95 mm long modulator has a half-wave voltage of 3.2 V and an extinction ratio of 15.4 dB. We also show that modulators, with the same design but fabricated in different wafers, present very similar performances, corroborating the reliability of the process design kit (PDK) component and the manufacturing process.