Development of PECVD SiN Thin Films for Integrated Photonic Applications on 300 mm Wafers
摘要
This work focusses on the development of CMOS compatible SiN processes for visible (VIS) and infrared (IR) applications in a 300 mm industry standard clean room. By utilizing PECVD for SiN deposition and RTA for annealing, hydrogen-related bonds were eliminated to reduce IR absorption. Thickness non-uniformity and process parameters have been optimized to reach improved optical properties across a broad wavelength range from 400 nm to 1600 nm. A versatile and uniform SiN process has been developed, which can act as a foundation for waveguides, optical couplers, resonators, and various applications targeting a universal photonic platform on 300 mm wafers.