Widely Tunable Laser on IMOS Platform
摘要
We introduce a compact widely tunable laser on an InP membrane on silicon platform. The laser features an intracavity filter employing a Mach-Zehnder interferometer structure, with an optimized design for a single mode operation. Our results demonstrate a 28 mA threshold current, a maximum output power of 2 dBm on chip, effective single-mode operation with a side-mode-suppression ratio (SMSR) of 30–45 dB, and a broad tuning range of 40 nm. The tuning map of the laser was determined using a search algorithm.