Micro-Transfer-Printed O-Band GaAs QD-On-Si Widely Tunable Laser
摘要
We present an O-band GaAs QD-on-Si integrated widely tunable laser realized by micro-transfer-printing a prefabricated GaAs SOA coupon on an advanced silicon photonics wafer. The resulting device exhibits single mode operation with >45 dB side-mode-suppression-ratio over a 30 nm wavelength tuning range in the O-band. The waveguide-coupled power is measured to be around 3.5 mW.