Silicon Nitride Metalenses at Near-Infrared Wavelengths Manufactured Using Deep-Ultraviolet Scanner Lithography
摘要
We present the Si3N4 metalenses fabricated on an InP wafer using deep-ultraviolet scanner lithography which is suitable for high-volume manufacturing. Despite limiting the pillar height to 750 nm, preventing full phase coverage, we demonstrate diffraction-limited focusing in the near-infrared regime. Furthermore, we showcase an achromatic metalens design that successfully reduces chromatic aberration by 40%. These achievements propose a promising alternative for mass-producing metalenses relevant to various applications such as optical sensing.