Hybrid SiN– Al(Ga)N Optical Phase Shifter at 1550 nm
摘要
A phase shifter based on GaN/AlxGa1-xN superlattice is experimentally evaluated, achieving a phase-shift efficiency of 7.2V·cm at 1550 nm. The phase-shifter relies on a SiN-rich rib waveguide with a 13% overlap with an underlying vertical GaN/AlxGa1-xN p-i-n junction. Additionally, we engage in a discussion about the role of charge depletion and Pockels effect on the measured phase-shift.