Reconfigurable Silicon Polarization Rotator in the O-Band Using Sb2Se3 on the Silicon-on-Insulator Platform
摘要
We report a reconfigurable polarization rotator (PR) for the O-band on the silicon-on-insulator (SOI) platform. The proposed PR consists of an asymmetric Sb2Se3/Si waveguide. The polarization of the optical mode can be maintained or switch to the orthogonal state by changing the Sb2Se3 between the amorphous and crystalline states, respectively. Our fabricated device exhibits a polarization conversion efficiency (PCE) as low as −0.25 dB and a polarization extinction ratio (PER) of 12.5 dB at 1310 nm. Moreover, our device is just 21 µm long and exhibits broad spectral response.