Integrated-SiGe Waveguide Photodetector in the 5.2–10 µm Wavelength Range Operating at Room Temperature

会议论文
发表日期：

2024年

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Thi Hao Nhi Nguyen,
Victor Turpaud,
Natnicha Koompai,
Jonathan Peltier,
Stefano Calcaterra,
Giovanni Isella,
Jean-René Coudevylle,
Carlos Alonso-Ramos,
Laurent Vivien,
Jacopo Frigerio,
Delphine Marris-Morini

摘要

This study presents a significant advancement in mid-infrared (MIR) photodetection, using a PIN diode incorporated into a graded-index SiGe photonic waveguide operating at room temperature. The photodetector exhibits broadband mid-infrared detection at a bias voltage of −15 V. The internal responsivity of the device is reported as 1 mA/W in the 5–10 µm infrared range.