Ge-fin Photodiodes with 3-dB Bandwidths Well Beyond 110 GHz for O-Band Receiver Subsystems
摘要
We present Ge-fin photodiode variants with 3dB-bandwidths from 68 GHz to more than 110 GHz, responsivities from 0.5 AW−1 to 0.8 AW−1 (−2 V, λ = 1310 nm) and dark currents of 150 nA at −2 V. Furthermore we evaluate the power handling capabilities of our Ge photodiodes. These devices outperform other Ge photodiodes and are on par with state-of-the-art InP-based photodiodes.