III-V Electro-Absorption Modulation and Detection Devices Integrated to 220 nm Silicon-on-Insulator
摘要
III-V indium phosphide (InP) ridge coupons capable of electro-absorption modulation and detection are integrated on a 220 nm silicon-on-insulator platform using transfer printing. The coupons employ a PIN structure design that can be actively biased to efficiently modulate and detect light with a bandwidth of >30 nm from 1550–1580 nm. Across the C-band, the grating coupled devices provide an extinction ratio (ER) of 25 dB and detect light with a responsivity of over 0.85 A/W, with an insertion loss (IL) at 0 V of 3.5 dB at 1580 nm and 6.5 dB at 1550 nm.