Positioning and Perspectives of GaN-Based Power Devices

In Chap. 8 , Gerald Deboy and Matthias Kasper of Infineon Technologies delve into the positioning and perspectives of gallium nitride (GaN)-based power devices relative to competing technologies like silicon superjunction and silicon carbide (SiC) in the 600 V/650 V class. They explore various GaN-based device concepts, including vertical and lateral designs, and discuss their characteristics and value propositions across different applications. The chapter highlights GaN HEMTs’ advantages in high-frequency domains and innovative device constructions enabling bidirectional switching capabilities. Specific emphasis is placed on GaN HEMTs’ role in power factor correction and DC/DC stages, illustrating their potential to advance power electronics. This comprehensive analysis underscores the evolving landscape of power semiconductor technologies and the promising future of GaN-based devices in the field.