Challenges and Future Trends

In this chapter, industry experts Patrick Le Fèvre, Geoff Haynes, Kennith Kin Leong, Vlad Odnoblyudov, Cem Basceri, and Han Wui Then examine the challenges and future trends of gallium nitride (GaN) technology. Le Fèvre sets the stage, highlighting the transformative impact of Wide-bandgap (WBG) semiconductors. Haynes explores GaN’s historical progress and potential in high-power applications. Leong discusses GaN monolithic bidirectional switches (M-BDS) and their revolutionary potential in power electronics. Odnoblyudov and Basceri focus on GaN’s scalability through innovative manufacturing, impacting device performance and cost. Then addresses critical challenges, emphasizing cost-effectiveness and integration with silicon CMOS.