GaN Technology

章节
发表日期：

2024年

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Florin Udrea,
Kengo Ohmori,
Ming Su,
Michael de Rooij,
Sam Abdel-Rahman,
Walter Balzarotti,
Doug Bailey,
Andrew Smith,
Oliver Häberlen,
Tim McDonald,
Mark Davidson,
Troy Baker,
Ryo Takeda,
Takamasa Arai,
Stephen Oliver

摘要

In this chapter, authored by a consortium of industry experts, GaN (Gallium Nitride) technology’s transformative impact on power electronics is comprehensively explored. Florin Udrea (Cambridge GaN Devices) lays the groundwork, covering GaN’s material properties and device integration. Kengo Ohmori and Ming Su (Rohm Semiconductor) delve into GaN transistor evolution, emphasizing its high-power applications. Michael de Rooij (Efficient Power Conversion) addresses layout challenges, while Sam Abdel-Rahman (Infineon Technologies) underscores efficiency in data centers. Various contributors from Infineon discuss gate-driver designs, reliability testing, and vertical GaN technology. Insights from Keysight Technologies focus on dynamic characterization challenges. Stephen Oliver (Navitas Semiconductor) offers perspectives on GaN IC evolution. This collective expertise highlights GaN’s significance in advancing power electronics efficiency, size, and performance.