Manufacturing Processes

In this chapter on Manufacturing Processes, Sonu Daryanani, accompanied by researchers from STMicroelectronics (Aurore Constant, Cristina Tringali, and Ferdinando Iucolano), explores the complexities of Gallium Nitride (GaN) device fabrication. Daryanani delves into epitaxial growth techniques, defect characterization, and the role of ion implantation in optimizing GaN power devices. The subsequent section by STMicroelectronics researchers provides an in-depth overview of GaN device processing methodologies and challenges. Together, they present a detailed examination of epitaxy, defects, and ion implantation, followed by a comprehensive analysis of GaN device fabrication techniques and associated complexities. This chapter serves as a valuable resource for understanding the intricate processes involved in manufacturing GaN-based devices.