BJT Based Voltage Reference Circuits Comparisons in 65 nm CMOS Process
摘要
Selected bandgap voltage reference circuits based on bipolar transistors from the literature are implemented and simulated using the same process node. This allowed us to compare their performance parameters. The process node used for the simulation is 65 nm PTM which is publicly available. Out of the four designs selected, design II shows the best overall results with temperature coefficient of 17.3 ppm/ ºc, supply voltage ranges from 0.7 to 1.21 V, PSRR of -120 @ 10 Hz, and reasonable gate area.