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Mathematical Modeling for Identifying the Unknown Thermal Properties of Material in Phase Change Memory

  • Huu Tan Nguyen,
  • Phuong Nguyen-Tri

摘要

The fundamental principle of two techniques, namely the 3-omega (contact) and Modulated photothermal radiometry (contactless) have been described. Models for identifying the thermal properties of thin film structures have been presented with a specific focus on a multi-layer thin film (IST/SiO2/Si) configuration featuring a phase change chalcogenide material known as InSbTe (IST) on top. This IST thin film is used as the active layer in Phage Change Memory (PCM), an emerging technology for non-volatile storage. Despite the difference in the shape of the heat flux distribution, the heat transfer model shows similarities for both techniques. Finally, by using a protocol, the thermal conductivity k and related thermal boundary resistances (TBRs) of layer of interest can be estimated.