More Silicon Detector Types

In this chapter, more silicon-based detector types are shortly described. Pixel devices HAPS, MAPS, CMOS, HV(HR)-CMOS (DMAPS) and SOI sensors are introduced. Silicon drift detectors are used as an alternative 2D position sensing device. DEPFETs are developments where charge amplification is implemented with a different concept from standard devices. LGADs and their evolution also provide fast-timing information and will be instrumented in the HL-LHC experiments. Their successors are in development to guarantee precise timing and precise spatial information. The 3D detectors are deviations from standard planar processing mainly developed for harsh radiation environments — for the LHC and HL-LHC experiments.