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Integrated High Voltage and Power Transistors

  • Badih El-Kareh,
  • Lou N. Hutter

摘要

The MOSFETs and bipolar transistors described so far are designed for low to moderate applied voltages. In particular, the operating voltage of digital MOSFET has steadily decreased from about 10 V in very early technologies to less than 0.8 V in present advanced designs (Fig. 1.1).