Comparison of Theoretical and Experimental Data

In this chapter, experimental barrier heights of Schottky contacts and valence-band offsets of the elemental semiconductors diamond, silicon and germanium, the compound semiconductors SiC, AlN, GaN, InN, GaAs and Ga2O3, the insulators SiO2, Si3N4 and Al2O3 as well as SrTiO3 as a typical example of the perovskites are summarized and analyzed using the concept of interface-induced gap states. The interface dipoles are described by the differences of the electronegativities of the two solids in contact. The branch-point energies and slope parameters obtained from the experimental data are briefly compared with the results of the theoretical calculations presented in the previous chapter.