Effect of Annealing Temperature on Structural, Morphological and Optical Properties of CdZnTe Thin Films

The study examines CdZnTe films produced on nickel substrates using a chemical bath process in non-aqueous medium, each with a different annealing temperature. It has been noted that the aqueous system has restrictions on temperature, film area, solubility, hydrogen gas evolution, etc. Work on the non-aqueous medium for the ternary compound”s deposition has been chosen in order to circumvent the aforementioned issues. Many engineering issues should be resolved by the use of a non-aqueous bath for the deposition of semiconductors, metal alloys, and other materials. Photovoltaic solar cells use CdZnTe, an II–VI compound semiconductor, because of its adjustable band gap and excellent efficiency. The properties of CdZnTe thin film are intermediate between those of ZnTe and CdZnTe. Their inclusion creates a common lattice with a higher energy band gap than ZnTe, which increases the material”s appeal for electronic device construction. By changing the temperature, the CdZnTe film”s growth characteristics can be adjusted. XRD, SEM, EDS, FTIR, and PL were used to analyze the structural morphology, elemental composition, and optical characteristics of the deposited CdZnTe films after they were annealed at 300°, 350°, 400°, and 450 °C in air. After annealing, the average crystallite size and crystallinity of the deposited CdZnTe films improve. The annealed CdZnTe film that is being described has good characteristics for usage in sensor applications and optoelectronics for solar cells.