Charge Transport Physics of Perovskite Field Effect Transistors

Field effect transistor (FETs) is the key element in modern electronic devices. Fabrication of low-cost large-scale and high efficient FETs will enable development of low-cost electronic devices with enhanced capabilities. Field effect mobility (µ) is an important parameter to characterize the performance of a FET. Owing to low electron and hole effective masses in halide perovskitesEffective mass, the field effect mobility in these class of semiconductors is expected to be exceptionally high. However, several issues related to fabrication of phase pure materials and unusual defect dynamics significantly influence the charge carrierCharge carriers transportCarrier transport in these class of semiconductors. In this chapter, we discuss the various sources of instabilitiesInstabilities prevalent in the field -driven charge transport of these perovskite semiconductorPerovskite semiconductor and various strategies implemented to improve the device performance.