Perovskite Based Neuromorphic Devices

PerovskitesPerovskites have empowered next generation optoelectronic devices due to their cross-coupled light and electric fieldElectric field tunable functions enabled by heterogeneity of ions and carriers. Outstanding optoelectronic properties of halide perovskitesHalide perovskite (HP) thin films include fast ion migrationIon migration, tunable compositionCompositions, facile synthetic routes, large light absorptionAbsorption coefficients, long carrier lifetimeCarrier lifetime, long carrier diffusion lengths, and high defect toleranceDefect tolerance. These properties have made halide perovskitesHalide perovskite (HP) thin films promising candidates for memory and computing devices. The recent spotlight in every branch including technology, data science and engineeringEngineering is the realization of advanced artificial intelligent systems, including memristorsMemristors and neuromorphic devicesNeuromorphic devices for rendering high speed, low power consuming devices overcoming the limitations of Moore’s law and the von Neumann bottleneck. This chapter provides an insight to the rich dynamics of the structural and optoelectronic characteristics of the perovskite materialPerovskite materials making them a potential candidate for artificial systems; and utilization of electrically/optically driven perovskite materialPerovskite materials to emulate the adaptive learning process and pattern recognitionPattern recognition capability of neuromorphic computingNeuromorphic computing and the synaptic and memory behavior of human brainHuman brain.